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10V 1A PXI SMU 4 Channel Sub Card Pulse SMU Source Measure Unit CBI402
The CBI402 modular subcard is a high-density, multi-channel Source Measure Unit (SMU) engineered for high-efficiency and precision testing scenarios. Featuring a card-based architecture with 4 independent channels per subcard and a common-ground configuration, it seamlessly integrates with CS-series hosts (e.g., CS1010C), enabling scalable expansion up to 40 channels per host. This design significantly increases testing throughput while reducing system integration costs, making it ideal for high-volume applications like power device validation and multi-probe wafer testing.
Product Features
▪ Multi-functional Integration: Combines voltage/current sourcing, measurement, and electronic load functionalities.
▪ Four-Quadrant Operation: Supports sourcing/sinking modes (±10V, ±1A) for dynamic device characterization.
▪ High Power Output: Delivers up to 1A current and 10W per channel for robust testing capabilities.
▪ Synchronized Multi-channel Control: Enables parallel sourcing/measurement across channels with μs-level timing alignment.
▪ Dual Testing Modes: Pulsed and DC modes for flexible test protocol adaptation.
▪ Configurable Architecture: Channels operate independently or in synchronized groups for mixed-device testing workflows.
Product Parameters
Items |
Parameters |
Number of Channels |
4 channels |
Voltage Range |
1~10V |
Minimum Voltage Resolution |
100uV |
Current Range |
2mA~1A |
Minimum Current Resolution |
200nA |
Minimum Pulse Width |
100μs, maximum duty cycle 100% |
Programmable Pulse Width Resolution |
1μs |
Maximum Continuous Wave (CW) Output Power |
10W, 4-quadrant source or sink mode |
Maximum Pulse (PW) Output Power |
10W, 4-quadrant source or sink mode |
Stable Load Capacitance |
<22nF |
Broadband Noise (20MHz) |
2mV RMS (typical value), <20mV Vp-p (typical value) |
Maximum Sampling Rate |
1000 S/s |
Source Measurement Accuracy |
0.10% |
Hosts it is Compatible with |
1003C,1010C |
Applications
▪ Power Semiconductors: Used for various tests of power semiconductors represented by SiC (Silicon Carbide) and GaN (Gallium Nitride), including breakdown voltage testing and aging testing, providing data support for the research and development and quality inspection of power semiconductors.
▪ Discrete Devices: Can conduct withstand voltage tests on discrete devices such as diodes and transistors, ensuring that the performance of these devices meets standards under different voltage environments.
▪ Integrated Circuits: In the fields of integrated circuits and microelectronics, it is used for chip - related tests to ensure the stability and reliability of chips in high - voltage environments.
▪ Material Research: For the study of the electrical properties of semiconductor materials, through high - voltage output and measurement functions, the characteristics of materials are analyzed, contributing to the research and development of new semiconductor materials.
▪ Sensors: Provides performance verification test solutions for various sensors, simulates high - voltage environments, and detects the performance of sensors under extreme voltage conditions.
▪ Teaching Field: Provides professional equipment for integrated circuit and microelectronics teaching laboratories, helping students learn the principles and operation methods of high - voltage testing and improving their practical abilities.