10kV/6000A Power Device Analyzer Static Test PMST For Mosfet BJT IGBT SiC GaN Semiconductor

10kV/6000A Power Device Analyzer Static Test PMST For MOSFET BJT IGBT And SiC GaN Semiconductors

PMST Static Parameter Test System for Power Devices integrates multiple measurement and analysis functions, enabling precise testing of static parameters for various power devices (e.g., MOSFETs, BJTs, IGBTs) across different package types. It features high-voltage and high-current characteristics, μΩ-level precision measurement, and nA-level current measurement capabilities. The system supports junction capacitance measurements of power devices under high-voltage mode, including input capacitance, output capacitance, and reverse transfer capacitance.

Configured with modular measurement units, the PMST system adopts a flexible modular design that allows users to easily add or upgrade measurement modules. This adaptable architecture ensures seamless compatibility with evolving testing requirements for power devices.

Product Features

▪ High voltage up to 3500V (expandable to 10kV maximum)

▪ High current up to 6000A (via multi-module parallel connection)

▪ nA-level leakage current and μΩ-level on-resistance

▪ High-precision measurement with 0.1% accuracy

▪ Modular configuration: Measurement units can be added or upgraded, supporting comprehensive testing functions such as IV, CV, transconductance, etc.

▪ High testing efficiency with automatic switching and one-click operation

▪ Wide temperature range, supporting room-temperature and high-temperature testing

▪ Compatibility with multiple package types; custom fixtures available based on testing requirements

Product Parameters

Applications

▪ New Energy Vehicles (NEVs)

▪ Photovoltaic Inverter

▪ Wind Power

▪ Rail Transit

▪ Variable Frequency Drive (VFD)